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| AP15N03P Advanced Power Electronics Corp. Low Gate Charge Simple Drive Requirement Fast Switching G D S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID TO-220 30V 80m 15A Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuit. G S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 20 15 9 50 28 0.22 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.5 62 Unit /W /W Data & specifications subject to change without notice 200218032 AP15N03P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.037 Max. Units 80 100 3 1 25 100 V V/ m m V uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A VGS=4.5V, ID=6A 5.4 1.3 3.6 3.6 19.8 13 3.2 260 144 13 VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= 20V ID=8A VDS=24V VGS=5V VDS=15V ID=8A RG=3.3,VGS=10V RD=1.9 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 15 50 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=15A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP15N03P 60 25 T C =25 o C 50 V G =10V V G =8.0V 20 T C =150 o C V G =10V V G =8.0V V G =6.0V ID , Drain Current (A) 40 V G =6.0V 30 ID , Drain Current (A) 15 V G =4.0V 10 20 V G =4.0V 10 5 0 0 1 2 3 4 5 6 7 8 0 0 1 2 3 4 5 6 7 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 75 1.8 70 I D =8A I D =8A o 1.6 65 T C =25 C Normalized RDS(ON) V G =10V 60 1.4 RDS(ON) (m ) 55 1.2 50 1 45 40 0.8 35 0.6 30 2 3 4 5 6 7 8 9 10 11 -50 0 50 100 150 T j , Junction Temperature ( C) o V GS (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP15N03P 20 40 15 30 ID , Drain Current (A) 10 PD (W) 20 5 10 0 25 50 75 100 125 150 0 0 50 100 150 T c , Case Temperature ( C) o T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 10us Normalized Thermal Response (R thjc) DUTY=0.5 0.2 ID (A) 0.1 10 0.1 0.05 100us 0.02 SINGLE PULSE 0.01 PDM 1ms 10ms T c =25 o C Single Pulse 1 1 10 100 t T Duty factor = t/T Peak Tj = P DM x Rthjc + TC 100ms V DS (V) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP15N03P f=1.0MHz 16 1000 14 I D =8A V DS =16V V DS =20V Ciss Coss 100 VGS , Gate to Source Voltage (V) 12 10 V DS =24V 8 6 C (pF) 4 Crss 2 0 0 2 4 6 8 10 12 14 16 10 1 6 11 16 21 26 31 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3 10 T j =150 o C 2 VGS(th) (V) 1 0 -50 IS (A) T j =25 o C 1 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 V SD (V) T j , Junction Temperature( C) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP15N03P VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G + 10 V - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D G S + 0.8 x RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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